High-performance thin-film battery with an interfacial layer

ABSTRACT

An all solid-state lithium-based thin-film battery is provided. The all solid-state lithium-based thin-film battery includes a battery material stack of, from bottom to top, an anode-side electrode, an anode region, an aluminum oxide interfacial layer, a solid-state electrolyte layer, a cathode layer, and a cathode-side electrode layer. The all solid-state lithium-based thin-film battery stack is formed by first forming the anode-side of the battery stack and thereafter forming the cathode-side. All solid-state lithium-based thin-film batteries including the aluminum oxide interfacial layer located between the anode region and the solid-state electrolyte layer have improved performance, high capacity, and high reliability.

BACKGROUND

The present application relates to an all solid-state thin film batteryand a method of forming the same. More particularly, the presentapplication relates to all solid-state lithium-based thin-film batteryhaving enhanced performance, and a method of forming such a battery.

In recent years, there has been an increased demand for portableelectronic devices such as, for example, computers, mobile phones,tracking systems, scanners, medical devices, smart watches, and fitnessdevices. One drawback with portable electronic devices is the need toinclude a power supply within the device itself. Typically, a battery isused as the power supply of such portable electronic devices. Batteriesmust have sufficient capacity to power the portable electronic devicefor at least the length that the device is being used. Sufficientbattery capacity can result in a power supply that is quite heavy and/orlarge compared to the rest of the portable electronic device. As such,smaller sized and lighter weight power supplies with sufficient energystorage are desired. Such power supplies can be implemented in smallerand lighter weight portable electronic devices.

Another drawback of conventional batteries is that some of the batteriescontain potentially flammable and toxic materials that may leak and maybe subject to governmental regulations. As such, it is desired toprovide an electrical power supply that is safe, solid-state andrechargeable over many charge/discharge life cycles.

One type of an energy-storage device that is small and light weight,contains non-toxic materials and that can be recharged over manycharge/discharge cycles is a solid-state, lithium-based battery.Solid-state, lithium-based batteries are rechargeable batteries thatinclude two electrodes implementing lithium. Typically, lithium-basedbatteries include a lithiated cathode material layer and an anode regionthat includes lithium. In some embodiments, the anode region can beformed during a charging/recharging process.

In conventional solid-state, lithium-based batteries the cathode side ofthe battery is formed prior to forming the anode side. In suchsolid-state, lithium-based batteries, the lithium-containing anoderegion may undergo oxidation. Moreover, and in some cases, the anoderegion of a conventional solid-state, lithium-based battery has anuneven distribution of lithium. Also, conventional solid-state,lithium-based thin-film batteries are not fast charging and have a lowcapacity. There is thus a need for providing an all solid-statelithium-based thin-film battery that has fast charging rates and highcapacity and that circumvents, to at least some degree, the problems ofanode oxidation and lithium distribution.

SUMMARY

An all solid-state lithium-based thin-film battery (hereinafter “allsolid-state lithium-based battery) is provided. The term “thin-filmbattery” is used throughout the present application to denote a batterywhose thickness is 100 μm or less. The term “all solid-state” denotes abattery that is entirely composed of solid materials. The allsolid-state lithium-based battery includes a battery material stack of,from bottom to top, an anode-side electrode, an anode region, analuminum oxide interfacial layer, a solid-state electrolyte layer, acathode layer, and a cathode-side electrode layer. The all solid-statelithium-based battery stack is formed by first forming the anode-side ofthe battery stack and thereafter forming the cathode-side. Allsolid-state lithium-based batteries including the aluminum oxideinterfacial layer located between the anode region and the solid-stateelectrolyte layer have improved performance, high capacity, and highreliability. In some embodiments, the all solid-state lithium-basedbattery has a fast charge rate C, wherein C is the total chargecapacity/hr. By “fast charge rate C” it is meant a charge rate of 3 C orgreater. In some embodiments, the all solid-state lithium-based batteryhas a specific charge capacity of greater than 50 mAh/g.

In one aspect of the present application, all solid-state lithium-basedbattery is provided. In one embodiment, the all solid-statelithium-based battery may include an anode-side electrode located on aphysically exposed surface of a substrate. An aluminum oxide interfaciallayer is located on the anode-side electrode. A lithium-basedsolid-state electrolyte layer is located on a physically exposed surfaceof the aluminum oxide interfacial layer. A lithiated cathode materiallayer is located on a physically exposed surface of the lithium-basedsolid-state electrolyte layer, and a cathode-side electrode is locatedon a physically exposed surface of the lithiated cathode material layer.

In another embodiment, the solid-state lithium-based battery may includea continuous anode-side electrode comprising a first horizontalanode-side electrode finger portion, a vertical anode-side electrodeportion and a second horizontal anode-side electrode finger portion,wherein the first and second horizontal anode-side electrode fingerportions are spaced apart by a gap and wherein the first horizontalanode-side electrode finger portion contacts a bottom portion of a firstsidewall of the vertical anode-side electrode portion, and the secondhorizontal anode-side electrode finger portion contacts a top portion ofthe first sidewall of the vertical anode-side electrode portion. Acontinuous aluminum oxide interfacial layer is located on the sidewallsand topmost surface of first horizontal anode-side electrode fingerportion, on the first sidewall of the vertical anode-side electrodeportion, and on a bottommost surface, a sidewall surface and a topmostsurface of the second horizontal anode-side electrode finger portion. Alithium-based solid-state electrolyte layer is located on the continuousaluminum oxide interfacial layer. A lithiated cathode material layer islocated on the lithium-based solid-state electrolyte, and a cathode-sideelectrode is located on the lithiated cathode material. In thisembodiment, the cathode-side electrode comprises a first horizontalcathode-side electrode finger portion, a vertical cathode-side electrodeportion and a second horizontal cathode electrode finger portion, thefirst horizontal cathode-side electrode finger portion contacts a middleportion of a first sidewall of the vertical cathode-side electrodeportion, and the second horizontal cathode-side electrode finger portioncontacts a top portion of the first sidewall of the verticalcathode-side electrode portion. In accordance with the presentapplication, the first horizontal cathode-side electrode finger portion,and a portion of each of the aluminum oxide interfacial layer, thelithium-based solid-state electrolyte and the lithiated cathode materiallayer are present in the gap, and the second horizontal cathode-sideelectrode finger portion is located above the second horizontalanode-side electrode finger portion.

In another aspect of the present application, a method of forming asolid-state lithium-based battery is provided. In one embodiment, themethod may include forming an anode-side electrode on a physicallyexposed surface of a substrate. Next, an aluminum oxide interfaciallayer is formed on the anode-side electrode. A lithium-based solid-stateelectrolyte layer is then formed on a physically exposed surface of thealuminum oxide interfacial layer. Next, a lithiated cathode materiallayer is formed on a physically exposed surface of the lithium-basedsolid-state electrolyte layer, and thereafter, a cathode-side electrodeis formed on a physically exposed surface of the lithiated cathodematerial layer.

In another embodiment, the method may include forming a continuousanode-side electrode on surface of a substrate, the continuousanode-side electrode comprising a first horizontal anode-side electrodefinger portion, a vertical anode-side electrode portion and a secondhorizontal anode-side electrode finger portion, wherein the first andsecond horizontal anode-side electrode finger portions are spaced apartby a gap and wherein the first horizontal anode-side electrode fingerportion contacts a bottom portion of a first sidewall of the verticalanode-side electrode portion, and the second horizontal anode-sideelectrode finger portion contacts a top portion of the first sidewall ofthe vertical anode-side electrode portion, Next, a continuous aluminumoxide interfacial layer is formed on the sidewalls and topmost surfaceof first horizontal anode-side electrode finger portion, on the firstsidewall of the vertical anode-side electrode portion, and on abottommost surface, a sidewall surface and a topmost surface of thesecond horizontal anode-side electrode finger portion. A lithium-basedsolid-state electrolyte layer is then formed on the aluminum oxideinterfacial layer, and a lithiated cathode material layer is thereafterformed on the lithium-based solid-state electrolyte layer. Next, acathode-side electrode is formed on a physically exposed surface of thelithiated cathode material layer, wherein the cathode-side electrodecomprises a first horizontal cathode-side electrode finger portion, avertical cathode-side electrode portion and a second horizontal cathodeelectrode finger portion, the first horizontal cathode-side electrodefinger portion contacts a middle portion of a first sidewall of thevertical cathode-side electrode portion, and the second horizontalcathode-side electrode finger portion contacts a top portion of thefirst sidewall of the vertical cathode-side electrode portion, andwherein the first horizontal cathode-side electrode finger portion, anda portion of each of the aluminum oxide interfacial layer, thelithium-based solid-state electrolyte and the lithiated cathode materiallayer are present in the gap, and the second horizontal cathode-sideelectrode finger portion is located above the second horizontalanode-side electrode finger portion.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross sectional view of an exemplary structure including ananode-side electrode located on a surface of a substrate that can beemployed in accordance with an embodiment of the present application.

FIG. 2 is a cross sectional view of the exemplary structure of FIG. 1after forming an aluminum oxide (i.e., Al₂O₃) interfacial layer on aphysically exposed surface of the anode-side electrode.

FIG. 3 is a cross sectional view of the exemplary structure of FIG. 2after forming a solid-state electrolyte layer on a physically exposedsurface of the aluminum oxide interfacial layer.

FIG. 4 is a cross sectional view of the exemplary structure of FIG. 3after forming a cathode layer on a physically exposed surface of thesolid-state electrolyte layer.

FIG. 5 is a cross sectional view of the exemplary structure of FIG. 4after forming a cathode-side electrode on a physically exposed surfaceof the cathode layer.

FIG. 6 is a cross sectional view of the exemplary structure of FIG. 5after performing a charging/recharging process.

FIG. 7 is a cross sectional view of another exemplary structure of thepresent application in which an all solid-state lithium-based batterystack including a deposited anode region is formed on a surface of asubstrate.

FIG. 8 is a cross sectional view of a back to back all solid-statelithium-based battery for use in large scale integration.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “beneath” or “under” another element, it can bedirectly beneath or under the other element, or intervening elements maybe present. In contrast, when an element is referred to as being“directly beneath” or “directly under” another element, there are nointervening elements present.

Referring now to FIG. 1, there is illustrated an exemplary structureincluding an anode-side electrode located 12 on a surface of a substrate10 that can be employed in accordance with an embodiment of the presentapplication. As is shown and for this embodiment of the presentapplication, the anode-side electrode 12 is a continuous layer (withoutany intentionally formed gaps or breaks) that is present on an entiretyof the substrate 10.

The substrate 10 that can be employed in the present applicationincludes any conventional material that is used as a substrate for asolid-state lithium-based battery. The substrate 10 that is employedshould be composed of a material that limits lithium ion diffusion therethrough. In one embodiment, the substrate 10 may include one or moresemiconductor materials. The term “semiconductor material” is usedthroughout the present application to denote a material havingsemiconducting properties.

Examples of semiconductor materials that may be employed as substrate 10include silicon (Si), germanium (Ge), silicon germanium alloys (SiGe),silicon carbide (SiC), silicon germanium carbide (SiGeC), III-V compoundsemiconductors or II-VI compound semiconductors. III-V compoundsemiconductors are materials that include at least one element fromGroup III of the Periodic Table of Elements and at least one elementfrom Group V of the Periodic Table of Elements. II-VI compoundsemiconductors are materials that include at least one element fromGroup II of the Periodic Table of Elements and at least one element fromGroup VI of the Periodic Table of Elements.

In one embodiment, the semiconductor material that may provide substrate10 is a bulk semiconductor substrate. By “bulk” it is meant that thesubstrate 10 is entirely composed of at least one semiconductormaterial, as defined above. In one example, the substrate 10 may beentirely composed of silicon. In some embodiments, the bulksemiconductor substrate may include a multilayered semiconductormaterial stack including at least two different semiconductor materials,as defined above. In one example, the multilayered semiconductormaterial stack may comprise, in any order, a stack of Si and a silicongermanium alloy.

In another embodiment, substrate 10 is composed of a topmostsemiconductor material layer of a semiconductor-on-insulator (SOI)substrate. The SOI substrate would also include a handle substrate (notshown) including one of the above mentioned semiconductor materials, andan insulator layer (not shown) such as a buried oxide below the topmostsemiconductor material layer.

In any of the embodiments mentioned above, the semiconductor materialthat may provide the substrate 10 may be a single crystallinesemiconductor material. The semiconductor material that may provide thesubstrate 10 may have any of the well known crystal orientations. Forexample, the crystal orientation of the semiconductor material that mayprovide substrate 10 may be {100}, {110}, or {111}. Othercrystallographic orientations besides those specifically mentioned canalso be used in the present application.

In another embodiment, the substrate 10 is a metallic material such as,for example, aluminum (Al), aluminum alloy, titanium (Ti), tantalum(Ta), tungsten (W), or molybdenum (Mo).

In yet another embodiment, the substrate 10 is a dielectric materialsuch as, for example, doped or non-doped silicate glass, silicondioxide, or silicon nitride. In yet a further embodiment, the substrate10 is composed of a polymer or flexible substrate material such as, forexample, a polyimide, a polyether ketone (PEEK) or a transparentconductive polyester. In yet an even further embodiment, the substrate10 may be composed of a multilayered stack of at least two of the abovementioned substrate materials, e.g., a stack of silicon and silicondioxide.

The substrate 10 that can be used in the present application can have athickness from 10 μm to 5 mm. Other thicknesses that are lesser than, orgreater than, the aforementioned thickness values may also be used forsubstrate 10.

In some embodiments, the substrate 10 may have a non-textured (flat orplanar) surface. The term “non-textured surface” denotes a surface thatis smooth and has a surface roughness on the order of less than 100 nmroot mean square as measured by profilometry. In yet another embodiment,the substrate 10 may have a textured surface. In such an embodiment, thesurface roughness of the textured substrate can be in a range from 100nm root mean square to 100 μm root mean square as also measured byprofilometry. Texturing can be performed by forming a plurality ofetching masks (e.g., metal, insulator, or polymer) on the surface of anon-textured substrate, etching the non-textured substrate utilizing theplurality of masks as an etch mask, and removing the etch masks from thenon-textured surface of the substrate. In some embodiments, the texturedsurface of the substrate is composed of a plurality of pyramids. In yetanother embodiment, the textured surface of the substrate is composed ofa plurality of cones. In some embodiments, a plurality of metallic masksare used, which may be formed by depositing a layer of a metallicmaterial and then performing an anneal. During the anneal, the layer ofmetallic material melts and balls-ups such that de-wetting of thesurface of the substrate occurs.

The anode-side electrode 12 may include any metallic anode-sideelectrode material such as, for example, titanium (Ti), platinum (Pt),nickel (Ni), copper (Cu) or titanium nitride (TiN). In one example, theanode-side electrode 12 includes a stack of, from bottom to top, nickel(Ni) and copper (Cu). The anode-side electrode 12 may be formedutilizing a deposition process including, for example, chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),evaporation, sputtering, or plating. The anode-side electrode 12 mayhave a thickness from 10 nm to 500 nm. Other thicknesses that are lesserthan, or greater than, the aforementioned thickness values may also beused for the anode-side electrode 12.

Referring now to FIG. 2, there is illustrated the exemplary structure ofFIG. 1 after forming an aluminum oxide (i.e., Al₂O₃) interfacial layer16 on a physically exposed surface of the anode-side electrode 12. As isshow, the aluminum oxide interfacial layer 16 is a continuous layer thatcovers the entirety of the underlying anode-side electrode 12. In thisembodiment of the present application, the aluminum oxide interfaciallayer 16 is formed directly on a physically exposed surface of theanode-side electrode 12. In other embodiments (see, FIG. 7), thealuminum oxide interfacial layer 16 is formed directly upon anintentionally deposited anode material.

The aluminum oxide interfacial layer 16 may be formed utilizing adeposition process such as, for example, chemical vapor deposition,plasma enhanced chemical vapor deposition, or atomic layer deposition.The aluminum oxide interfacial layer 16 may have a thickness from 1 nmto 50 nm. Other thicknesses that are lesser than, or greater than, theaforementioned thickness values may also be used for the aluminum oxideinterfacial layer 16.

The presence of the aluminum oxide interfacial layer 16 helps to improvethe uniformity of lithium distribution in the resultant all solid-statelithium-based battery stack of the present application. The presence ofthe aluminum oxide interfacial layer 16 aids in reducing, and in someinstances, eliminates, oxidation of the anode region, which can beintentionally deposited or formed in-situ during a charging/rechargingprocess.

Referring now to FIG. 3, there is illustrated the exemplary structure ofFIG. 2 after forming a solid-state electrolyte layer 18 on a physicallyexposed surface of the aluminum oxide interfacial layer 16. Thesolid-state electrolyte layer 18 is a continuous layer that is presenton an entirety of the underlying aluminum oxide interfacial layer 16.

The solid-state electrolyte layer 18 includes a material that enablesthe conduction of lithium ions; the solid-state electrolyte layer 18 maybe referred to as a lithium-based solid-state electrolyte layer. Suchmaterials may be electrically insulating or ionic conducting. Examplesof materials that can be employed as the solid-state electrolyte layer18 include, but are not limited to, lithium phosphorus oxynitride(LiPON) or lithium phosphosilicate oxynitride (LiSiPON).

The solid-state electrolyte layer 18 may be formed utilizing adeposition process such as, sputtering or plating. In one embodiment,the solid-state electrolyte layer 18 is formed by sputtering utilizingany conventional precursor source material. Sputtering may be performedin the presence of at least a nitrogen-containing ambient. Examples ofnitrogen-containing ambients that can be employed include, but are notlimited to, N₂, NH₃, NH₄, NO, or NH_(x) wherein x is between 0 and 1.Mixtures of the aforementioned nitrogen-containing ambients can also beemployed. In some embodiments, the nitrogen-containing ambient is usedneat, i.e., non-diluted. In other embodiments, the nitrogen-containingambient can be diluted with an inert gas such as, for example, helium(He), neon (Ne), argon (Ar) and mixtures thereof. The content ofnitrogen (N₂) within the nitrogen-containing ambient employed istypically from 10% to 100%, with a nitrogen content within the ambientfrom 50% to 100% being more typical.

The solid-state electrolyte layer 18 may have a thickness from 10 nm to10 μm. Other thicknesses that are lesser than, or greater than, theaforementioned thickness values may also be used for the solid-stateelectrolyte layer 18.

Referring now to FIG. 4, there is illustrated the exemplary structure ofFIG. 3 after forming a cathode layer 20 on a physically exposed surfaceof the solid-state electrolyte layer 18. The cathode layer 20 is acontinuous layer that is present on an entirety of the underlyingsolid-state electrolyte layer 18.

The cathode layer 20 may include a lithiated material such as, forexample, a lithium-based mixed oxide. Hence, the cathode layer 20 may bereferred to as a lithiated cathode material layer. Examples oflithium-based mixed oxides that may be employed as the cathode layer 20include, but are not limited to, lithium cobalt oxide (LiCoO₂), lithiumnickel oxide (LiNiO₂), lithium manganese oxide (LiMn₂O₄), lithiumvanadium pentoxide (LiV₂O₅) or lithium iron phosphate (LiFePO₄).

The cathode layer 20 may be formed utilizing a deposition process suchas, sputtering or plating. In one embodiment, the cathode layer 20 isformed by sputtering utilizing any conventional precursor sourcematerial or combination of precursor source materials. In one example, alithium precursor source material and a cobalt precursor source materialare employed in forming a lithium cobalt mixed oxide. Sputtering may beperformed in an admixture of an inert gas and oxygen. In such anembodiment, the oxygen content of the inert gas/oxygen admixture can befrom 0.1 atomic percent to 70 atomic percent, the remainder of theadmixture includes the inert gas. Examples of inert gases that may beused include argon, helium, neon, nitrogen or any combination thereof.

The cathode layer 20 may have a thickness from 10 nm to 20 μm. Otherthicknesses that are lesser than, or greater than, the aforementionedthickness values may also be used for cathode layer 20.

Referring now to FIG. 5, there is illustrated the exemplary structure ofFIG. 4 after forming a cathode-side electrode 22 on a physically exposedsurface of the cathode layer 20. The cathode-side electrode 22 mayinclude any metallic cathode-side electrode material such as, forexample, titanium (Ti), platinum (Pt), nickel (Ni), aluminum (Al) ortitanium nitride (TiN). In one example, the cathode-side electrode 22includes a stack of, from bottom to top, titanium (Ti), platinum (Pt)and titanium (Ti). In one embodiment, the metallic electrode materialthat provides the cathode-side electrode 22 may be the same as themetallic electrode material that provides the anode-side electrode 12.In another embodiment, the metallic electrode material that provides thecathode-side electrode 22 may be different from the metallic electrodematerial that provides the anode-side electrode 12. The cathode-sideelectrode 22 may be formed utilizing one of the deposition processesmentioned above for forming the anode-side electrode 12. Thecathode-side electrode 22 may have a thickness within the rangementioned above for the anode-side electrode 12.

Collectively, the anode-side electrode 12, the aluminum oxideinterfacial layer 16, the solid-state electrolyte layer 18, the cathodelayer 20 and the cathode-side electrode 22 are components of an allsolid-state lithium-based battery stack 24 of the present application.

In some embodiments, the solid-state lithium-based battery stack 24shown in FIG. 5 may be patterned by any conventional patterning processsuch, as for example, lithography and etching. In some embodiments, anair and/or moisture impermeable structure may be formed surrounding thepatterned or non-patterned solid-state lithium-based battery stack. Theair and/or moisture impermeable structure includes any air and/ormoisture impermeable material or multilayered stack of such materials.Examples of air and/or moisture impermeable materials that can beemployed in the present application include, but are not limited to,parylene, a fluoropolymer, silicon nitride, and/or silicon dioxide. Theair and/or moisture impermeable structure may be formed by firstdepositing the air and/or moisture impermeable material and thereafterpatterning the air and/or moisture impermeable material. In oneembodiment, patterning may be performed by lithography and etching. Theair and/or moisture impermeable structure is located surrounding atleast the sidewall surfaces of the patterned solid-state lithium-basedbattery stack.

The all solid-state lithium-based battery stack 24 (patterned ornon-patterned) may be charged/recharged utilizing conventionaltechniques well known to those skilled in the art. For example, the allsolid-state lithium-based battery stack 24 (patterned or non-patterned)can be charged/recharged by connecting the all solid-state lithium-basedbattery stack 24 (patterned or non-patterned) to an external powersupply.

The solid-state lithium-based battery stack 24 of the presentapplication exhibits enhanced battery performance in terms of chargerate and specific charge capacity. In some embodiments and forsolid-state lithium based batteries, the all solid-state lithium-basedbattery stack 24 of the present application may have a fast charge rateC, wherein C is the total charge capacity/hr. By “fast charge rate C” itis meant a charge rate of 3 C or greater. In some embodiments, the allsolid-state lithium-based battery stack 24 of the present applicationhas a specific charge capacity of greater than 50 mAh/g.

Referring now to FIG. 6, there is illustrated the exemplary structure ofFIG. 5 after performing a charging/recharging process, as defined above.In accordance with this embodiment of the present application, an anoderegion 14 forms between the anode-side electrode 12 and the aluminumoxide interfacial layer 16 during the charging/recharging process. Inthis embodiment, the anode region 14 may be referred to herein as alithium accumulation region and the anode region includes at leastlithium and a partially lithiated interfacial layer. The anode region 14may, or may not, be a continuous layer.

Referring now to FIG. 7, there is illustrated another exemplarystructure of the present application. In this embodiment, a solid-statelithium-based battery stack 24 is formed on substrate 10. Thesolid-state lithium-based battery stack 24 of this embodiment is similarto the solid-state lithium-based battery stack 24 of FIG. 5 except thatan anode region 15 is formed prior to charging/recharging. In thisembodiment, the anode region 15 includes any material that is a lithiumion generator or lithium intercalation active material. Examples ofmaterials that may be used as anode region 15 include, but are notlimited to, lithium metal, a lithium-base alloy such as, for example,Li_(x)Si, or a lithium-based mixed oxide such as, for example, lithiumtitanium oxide (Li₂TiO₃). The anode region 15 may be a continuous layer.

As stated above, the anode region 15 of this embodiment of the presentapplication is formed prior to performing a charging/recharging process.In such an embodiment, the anode region 15 can be formed utilizing adeposition process such as, for example, chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PECVD), evaporation,sputtering or plating.

The solid-state lithium-based battery stack 24 shown in FIG. 7 may bepatterned as defined above. In some embodiments, an air and/or moistureimpermeable structure as defined above may be formed surrounding thepatterned or non-patterned solid-state lithium-based battery stack.

Referring now to FIG. 8, there is illustrated a back to back allsolid-state lithium-based battery 50 for use in large scale integrationin accordance with another embodiment of the present application. Thesolid-state lithium-based battery 50 includes a continuous anode-sideelectrode 12 comprising a first horizontal anode-side electrode fingerportion 12F1, a vertical anode-side electrode portion 12V and a secondhorizontal anode-side electrode finger portion 12F2, wherein the firstand second horizontal anode-side electrode finger portions (12F1, 12F2)are spaced apart by a gap and wherein the first horizontal anode-sideelectrode finger portion 12F1 contacts a bottom portion of a firstsidewall of the vertical anode-side electrode portion 12V, and thesecond horizontal anode-side electrode finger portion 12F2 contacts atop portion of the first sidewall of the vertical anode-side electrodeportion 12V. A continuous aluminum oxide interfacial layer 16 is locatedon the sidewalls and topmost surface of first horizontal anode-sideelectrode finger portion 12F1, on the first sidewall of the verticalanode-side electrode portion 12V, and on a bottommost surface, asidewall surface and a topmost surface of the second horizontalanode-side electrode finger portion 12F2. A lithium-based solid-stateelectrolyte layer 18 is located on the continuous aluminum oxideinterfacial layer 16. A lithiated cathode material layer 20 is locatedon the lithium-based solid-state electrolyte 18, and a cathode-sideelectrode 22 is located on the lithiated cathode material layer 20. Inthis embodiment, the cathode-side electrode 22 comprises a firsthorizontal cathode-side electrode finger portion 22F1, a verticalcathode-side electrode portion 22V and a second horizontal cathodeelectrode finger portion 22F2, the first horizontal cathode-sideelectrode finger portion 22F1 contacts a middle portion of a firstsidewall of the vertical cathode-side electrode portion 22V, and thesecond horizontal cathode-side electrode finger portion 22F2 contacts atop portion of the first sidewall of the vertical cathode-side electrodeportion 22V. As is shown in FIG. 8, the first horizontal cathode-sideelectrode finger portion 22F1, and a portion of each of the aluminumoxide interfacial layer 16, the lithium-based solid-state electrolyte 18and the lithiated cathode material layer 20 are present in the gap, andthe second horizontal cathode-side electrode finger portion 22F islocated above the second horizontal anode-side electrode finger portion12F1. As is further shown, a bottommost surface of the first horizontalanode-side electrode finger portion 12F1 is located directly on atopmost surface of a substrate 10. As is further shown, the verticalcathode-side electrode portion 22V has a height that is greater than aheight of the vertical anode-side electrode portion 12V.

The solid-state lithium-based battery 50 shown in FIG. 1 may be formedutilizing a shadow mask and wherein the position of the shadow mask ismoved after each layer is formed. Multiple shadow masks can be also usedduring the formation of each of the components of the battery 50.

While the present application has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A solid-state lithium-based battery comprising:an anode-side electrode located on a substrate; an aluminum oxideinterfacial layer located on the anode-side electrode; a lithium-basedsolid-state electrolyte layer located on the aluminum oxide interfaciallayer; a lithiated cathode material layer located on the lithium-basedsolid-state electrolyte layer; and a cathode-side electrode located thelithiated cathode material layer.
 2. The solid-state lithium-basedbattery of claim 1, further comprising an anode region located betweenthe aluminum oxide interfacial layer and the anode-side electrode. 3.The solid-state lithium-based battery of claim 2, wherein the anoderegion is a lithium accumulation region formed during acharging/recharging process.
 4. The solid-state lithium-based battery ofclaim 2, wherein the anode region is a deposited anode material.
 5. Thesolid-state lithium-based battery of claim 1, wherein the aluminum oxideinterfacial layer has a thickness from 1 nm to 50 nm.
 6. The solid-statelithium-based battery of claim 1, wherein the substrate has a texturedsurface.
 7. The solid-state lithium-based battery of claim 1, whereinthe solid-state lithium-based battery has a charge rate of greater than3 C.
 8. The solid-state lithium-based battery of claim 1, wherein thesolid-state lithium-based battery has a specific charge capacity ofgreater than 50 mAh/g.
 9. The solid-state lithium-based battery of claim2, wherein the aluminum oxide interfacial layer prevents oxidation ofthe anode region.
 10. The solid-state lithium-based battery of claim 1,wherein the aluminum oxide interfacial layer provides for a uniformlithium distribution in the battery.
 11. A method of forming asolid-state lithium-based battery, the method comprising: forming ananode-side electrode on a substrate; forming an aluminum oxideinterfacial layer directly on a surface of the anode-side electrode;forming a lithium-based solid-state electrolyte layer on the aluminumoxide interfacial layer; forming a lithiated cathode material layer thelithium-based solid-state electrolyte layer; forming a cathode-sideelectrode on the lithiated cathode material layer; and forming an anoderegion between the aluminum oxide interfacial layer and the anode-sideelectrode, wherein the forming the anode region comprises performing acharging/recharging process after forming the cathode-side electrode.12. The method of claim 11, wherein the aluminum oxide interfacial layerhas a thickness from 1 nm to 50 nm.
 13. The method of claim 11, whereinthe substrate has a textured surface.
 14. The method of claim 11,wherein the solid-state lithium-based battery has a charge rate ofgreater than 3 C.
 15. The method of claim 11, wherein the solid-statelithium-based battery has a specific charge capacity of greater than 50mAh/g.
 16. The method of claim 11, wherein the aluminum oxideinterfacial layer prevents oxidation of the anode region.
 17. The methodof claim 11, wherein the aluminum oxide interfacial layer provides for auniform lithium distribution in the battery.
 18. A method of forming asolid-state lithium-based battery, the method comprising: forming ananode-side electrode on a substrate; forming, via a deposition process,an anode region directly on a surface of the anode-side electrode;forming an aluminum oxide interfacial layer directly on a surface of theanode region; forming a lithium-based solid-state electrolyte layer onthe aluminum oxide interfacial layer; forming a lithiated cathodematerial layer the lithium-based solid-state electrolyte layer; andforming a cathode-side electrode on the lithiated cathode materiallayer.
 19. The method of claim 18, wherein the aluminum oxideinterfacial layer prevents oxidation of the anode region.
 20. The methodof claim 18, wherein the aluminum oxide interfacial layer provides for auniform lithium distribution in the battery.